256 Kb (64K x 4) Static RAM
Features
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Fast access time: 15 ns
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Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
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CMOS for optimum speed/power
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TTL-compatible inputs and outputs
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CY7C194BN is available in 24 DIP, 24 SOJ packages
General Description
The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.
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