AN6068 - Replacing MRAM with Cypress nvSRAM
Last Updated: 10/03/2012
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Version: *B
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| AN6068 discusses the key pinout differences between a MRAM and Cypress nvSRAM device. |
These differences should be taken into consideration while designing a PCB to use either a MRAM or the high performance nvSRAM on the same socket without making any PCB layout changes.
Introduction
Cypress offers a family of high-speed, high performance nvSRAM. The nvSRAM technology combines the performance characteristics of a high-speed SRAM with that of a nonvolatile cell. The other similar nonvolatile solution is the Magnetoresistive RAM (MRAM) in which magnetic polarization is used to store information permanently. This application note discusses about designing applications hardware with alternative part options to use either MRAM or nvSRAM on the same socket without any hardware redesign.
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これらの文献はあくまでもご参考のためのみに日本語翻訳されています。誤訳によるトラブルが発生した場合、Cypress Semiconductor Corp. 全ての子会社、関連会社、役員、従業員、販売代理店は一切の責任を負いかねます。
最新の英語版オリジナル文献を必ずご参照いただくことをお勧め致します。
Related Application Notes:
Domain Tags: Async, Non Volatile Memories, non-RTC
Related Knowledge Base: Autostore, HSB, Migration Path, nvSRAM, Parallel, Vcap, RECALL, Async, Datasheet, Technology
Spec No: 001-16633;
Sunset Owner: ZSK;
Secondary Owner: PSR;
Sunset Date: 09/22/11
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