AN6068 - Replacing 4Mbit (256K x16) MRAM with Cypress nvSRAM
Last Updated: 03/13/2013
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Version: *C
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| AN6068 discusses the key pinout differences between the Everspin 4Mbit (256K x 16) MRAM and Cypress 4Mbit (256K x 16) nvSRAM devices. These differences should be taken into consideration when designing a PCB to use either MRAM or the high performance nvSRAM on the same footprint as true alternate source part number on the same bill of materials (BOM). |
Introduction
Cypress offers the highest performance and most reliable nonvolatile RAM products available with its nvSRAM product line. The nvSRAM technology combines the performance characteristics of a high-speed SRAM with that of a nonvolatile memory. A similar nonvolatile solution is the Magnetoresistive RAM (MRAM) from Everspin in which magnetic polarization is used to store information. This application note discusses designing applications hardware with the option to use either MRAM or nvSRAM on the same socket without any hardware redesign.
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これらの文献はあくまでもご参考のためのみに日本語翻訳されています。誤訳によるトラブルが発生した場合、Cypress Semiconductor Corp. 全ての子会社、関連会社、役員、従業員、販売代理店は一切の責任を負いかねます。
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Related Application Notes:
Domain Tags: Async, Non Volatile Memories, non-RTC
Related Knowledge Base: Autostore, HSB, Migration Path, nvSRAM, Parallel, Vcap, RECALL, Async, Datasheet, Technology
Spec No: 001-16633;
Sunset Owner: ZSK;
Secondary Owner: PSR;
Sunset Date: 09/22/11
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