Cypress Perform

Answer: No. The current specified in the datasheets indicate just the current consumption by the core of the memory (I_DD). The current drawn by the I/Os (I_DDQ) is not specified in the datasheets as this value depends on the load driven by the I/O’s of the device and the number of I/O’s switching. Please use the power calculator tool in the following link to calculate the I/O switching power for sync SRAM products:

http://www.cypress.com/?docID=23984

For example, let us consider a QDR-II memory (for example, CY7C1315KV18 - Density 512 K x 36)

1. Activity factor ‘α’ =1 (Because the data gets transferred on both edges of the clock, 0.5 for Standard Sync and NoBL)
2. Maximum Clock Frequency ‘f’ is 333 MHz
3. Load Capacitance C_L is 5 pF (This value depends on the actual board layout and the load capacitance seen by the output pin of the memory)
4. Number of Switching I/Os N is 36 (This will be the number of I/Os driving the load)
5. V_DDQ is 1.9 V maximum
   Based on the formula, P = α f C_L V_DDQ² N
   I/O Switching Power is 216 mW
   I_DDQ is 113 mA

Customers must use this to design their power circuitry accordingly.